TY  - JOUR
AU  - Manhabosco, Taise M.
AU  - Aloni, Shaul
AU  - Urban, Jeffrey J.
AU  - Kuykendall, Tevye R.
AU  - Manhabosco, Sara M.
AU  - Batista, Ana Bárbara
AU  - Soares, Jaqueline S.
AU  - Barboza, Ana Paula M.
AU  - de Oliveira, Alan. B.
AU  - Batista, Ronaldo J. C.
PY  - 2019
DA  - 2019/10/29
TI  - Electrochemical Atomic Layer Epitaxy Deposition of Ultrathin SnTe Films
JO  - Recent Progress in Materials
SP  - 005
VL  - 01
IS  - 04
AB  - Tin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.
SN  - 2689-5846
UR  - https://doi.org/10.21926/rpm.1904005
DO  - 10.21926/rpm.1904005
ID  - Manhabosco2019
ER  -